Epitaxial growth of diamond on diamond substrate by plasma assisted CVD
作者： Matsukazu Kamo , Hisayoshi Yurimoto , Yoichiro Sato
DOI: 10.1016/0169-4332(88)90352-2
关键词: Scanning electron microscope 、 Materials science 、 Diamond 、 Raman spectroscopy 、 Electron diffraction 、 Material properties of diamond 、 Absorption spectroscopy 、 Crystallography 、 Substrate (electronics) 、 Epitaxy
摘要: The growth features of diamond from the gas phase have been studied using (111),(110) and (100) planes of diamond as substrates. The deposition layers were studied by reflection electron diffraction, Raman spectroscopy, scanning electron microscopy, secondary ion mass spectroscopy and absorption spectroscopy. Epitaxial growth on these planes was observed for the various crystallographic orientations. The growth rate decreases in the order (111)≅(110)>(100). Epitaxially grown layers on the (111) and (110) planes were …
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