Preparation and Optical Properties of Nanocrystalline Ga 0.62 In 0.38 Sb Embedded in SiO 2 Composite Films
作者： Fa-Min Liu , Li-De Zhang
DOI: 10.1088/0256-307X/17/2/024
关键词: Phonon 、 Absorption edge 、 X-ray photoelectron spectroscopy 、 Optoelectronics 、 Raman spectroscopy 、 Semiconductor 、 Optics 、 Spectral line 、 Nanocrystalline material 、 Materials science 、 Composite number
摘要: Nanocrystalline Ga0.62In0.38Sb embedded in SiO2 matrix has been fabricated by radio frequency magnetron co-sputtering. X-ray photoelectron spectroscopy strongly supports the existence of nanocrystalline matrix. The room-temperature Raman spectrum shows that peaks Ga0.62In0.38Sb-SiO2 composite film have a larger red shift about 95.3 cm-1 (longitudinal-optic) and 120.1 (transverse-optic) than those bulk GaSb. This can be explained phonon confinement tensile stress effects. optical transmission spectra show absorption edge exhibits large blue 2.43 eV compared with semiconductor, suggesting quantum size
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