Advancements in energy efficient GaN power devices and power modules for electric vehicle applications: a review
作者： Ravindranath Tagore Yadlapalli , Anuradha Kotapati , Srinivasa Rao Balusu , Rajani Kandipati , Chandra Sekhar Koritala
DOI: 10.1002/ER.6683
关键词: Efficient energy use 、 Electrical engineering 、 Power module 、 Electric vehicle 、 Power semiconductor device 、 Power density 、 Materials science
摘要: … The GaN high-electron-mobility transistors (HEMTs) can operate at higher switching … Figure 5D shows the schematic structure of the PSJ-FET under blocking state. The PSJ technology …
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