Selective chemical vapor deposition of tungsten for microelectromechanical structures

摘要: Abstract A selective chemical vapor deposition (CVD) tungsten process is used to fabricate three-dimensional micromechanical structures on a silicon substrate. Patterned are formed in dioxide trenches by nucleation and growth of from the bottom trench. Examples shown for single-crystal silicon, thin films silicon-implanted, layers. This high deposition-rate CVD had been greater than 4 μm thick. Tungsten patters with features 0.3 × 0.6 fabricated using electron beam lithography. As an example electromechnical structure, cantilever beams have make tweezers that move two dimensions application potential differences between (lateral motion), substrate (vertical motion). microtweezers 200 length cross-section 2.7 2.5 closed applied voltage less 150 V.