Long lifetime photoluminescence from a deep centre in copper-doped silicon
作者： S.P. Watkins , U.O. Ziemelis , M.L.W. Thewalt , R.R. Parsons
DOI: 10.1016/0038-1098(82)90772-4
关键词: Copper 、 Silicon 、 Luminescence 、 Atomic physics 、 Doping 、 Phonon 、 Exciton 、 Photoluminescence 、 Spectral line 、 Materials science
摘要: Abstract Intense, long lived photoluminescence lines with a complex local mode phonon structure are reported in copper-doped silicon. The spectra and luminescence decay times both studied as function of sample temperature. We interpret all these arising from the recombination excitons bound to single type copper-related isoelectronic defect.
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sci-hub.se 参考文章(12)
David H. Brown, S.R. Smith, Evidence for the existence of a complex isoelectronic center in Si : In Journal of Luminescence. ,vol. 21, pp. 329- 336 ,(1980) , 10.1016/0022-2313(80)90025-3
J. Wagner, J. Weber, R. Sauer, Excitation spectroscopy on the P, Q, R isoelectronic lines in indium doped silicon Solid State Communications. ,vol. 39, pp. 1273- 1276 ,(1981) , 10.1016/0038-1098(81)90225-8
J. Weber, W. Schmid, R. Sauer, Localized exciton bound to an isoelectronic trap in silicon Physical Review B. ,vol. 21, pp. 2401- 2414 ,(1980) , 10.1103/PHYSREVB.21.2401
M.L.W. Thewalt, U.O. Ziemelis, P.R. Parsons, Enhancement of long lifetime lines in photoluminescence from Si:In Solid State Communications. ,vol. 39, pp. 27- 30 ,(1981) , 10.1016/0038-1098(81)91040-1
M. L. W. Thewalt, U. O. Ziemelis, R. R. Parsons, Isoelectronic bound excitons in silicon: The role of deep acceptors Physical Review B. ,vol. 24, pp. 3655- 3658 ,(1981) , 10.1103/PHYSREVB.24.3655
P. J. Dean, Isoelectronic Trap Li-Li-O in GaP Physical Review B. ,vol. 4, pp. 2596- 2612 ,(1971) , 10.1103/PHYSREVB.4.2596
J. A. Rostworowski, R. R. Parsons, Photoluminescence in laser-annealed neutron transmuted silicon: isoelectronic traps Canadian Journal of Physics. ,vol. 59, pp. 496- 499 ,(1981) , 10.1139/P81-062
C. H. Henry, P. J. Dean, J. D. Cuthbert, New Red Pair Luminescence from GaP Physical Review. ,vol. 166, pp. 754- 756 ,(1968) , 10.1103/PHYSREV.166.754
J. Weber, W. Schmid, R. Sauer, Excitons bound to an isoelectronic trap in silicon Journal of Luminescence. ,vol. 18-19, pp. 93- 96 ,(1979) , 10.1016/0022-2313(79)90080-2
G.S. Mitchard, S.A. Lyon, K.R. Elliott, T.C. McGill, Observation of long lifetime lines in photoluminescence from Si: In Solid State Communications. ,vol. 29, pp. 425- 429 ,(1979) , 10.1016/0038-1098(79)91209-2