Composite thin films of (ZrO2)x-(Al2O3)1−x for high transmittance attenuated phase shifting mask in ArF optical lithography
作者： Fu-Der Lai
DOI: 10.1116/1.1701850
关键词: Thin film 、 Transmittance 、 Sputter deposition 、 Amorphous solid 、 Photolithography 、 Materials science 、 Optics 、 Composite number 、 Optoelectronics 、 Carbon film 、 Volume fraction
摘要: Stoichiometric (ZrO2)x-(Al2O3)1−x composite thin films are obtained by using rf unbalanced magnetron sputtering in an atmosphere of argon and oxygen. All the deposited amorphous. The ZrO2-Al2O3 will be nearly completely oxidized when O2/Ar flow rate ratio exceeds 0.5. optical constants calculated measured. measured values agree well with ones applying Hunderi effective medium model. can tuned controlling volume fraction ZrO2 Al2O3 films. requirements for a high-transmission attenuated phase-shifting mask (HT-APSM) blank satisfied suitable choice fraction. An optimized ArF lithography transmittance value 18%–20%, which conforms to typical HT-APSM blank, realized range 54.8% 48.8%. To used as one π-phase-shifted film...
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