Measurement of dislocation core distribution by digital processing of high-resolution transmission electron microscopy micrographs: a new technique for studying defects
作者： Slawomir Kret , PawelDlużewski , Piotr Dlużewski , Ewa Sobczak
DOI: 10.1088/0953-8984/12/49/334
关键词: Condensed matter physics 、 Crystallographic defect 、 Image processing 、 Dislocation 、 Heterojunction 、 Materials science 、 High-resolution transmission electron microscopy 、 Lattice (order) 、 Geometric phase 、 Optics 、 Digital image processing
摘要: A new technique for studying extended defects and dislocation networks is proposed. The approach, based upon the continuum theory of crystal defects, employed digital image processing high-resolution transmission electron micrographs. procedure starts with geometric phase method extracting lattice distortion field near cores. Next, core distribution (DCD) recovered from field. so-obtained DCD takes non-zero values only in disordered regions lattice. accuracy this investigated by mathematical integration over to find in-plane components Burgers vectors. proposed free topological problems can be used study spatial configurations complex large areas using a fully automatic computer program. This approach applied investigate network misfit dislocations interfacial region GaAs/ZnTe/CdTe heterostructure.
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