The capacitance of bicrystal Josephson junctions deposited on SrTiO/sub 3/ substrates
作者： E.J. Tarte , G.A. Wagner , R.E. Somekh , F.J. Baudenbacher , P. Berghuis
DOI: 10.1109/77.622212
关键词: Relative permittivity 、 Grain boundary 、 Hysteresis 、 High-temperature superconductivity 、 Josephson effect 、 Diffusion capacitance 、 Condensed matter physics 、 Capacitance 、 Materials science 、 Substrate (electronics)
摘要: We have investigated the capacitance of grain boundary Josephson junctions deposited on symmetric 24/spl deg/ misoriented SrTiO/sub 3/ bicrystal substrates using hysteresis and Fiske resonances in their current voltage characteristics. Our measurements show that total junction is proportional to area. The per unit area (140/spl plusmn/30) fF /spl mu/m/sup -2/ this implies main effect large relative permittivity substrate scale-up by a factor around 10. also find planar geometry velocity light depends upon film thickness.
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