Low dielectric loss induced by annealing in (La 0.5 Nb 0.5 ) 0.005 Ti 0.995 O 2 colossal permittivity ceramics

作者: Xiulei Cui , Baochun Guo , Peng Liu , Yuechan Song

DOI: 10.1007/S10854-019-02834-4

关键词: Dielectric lossDielectric spectroscopyMaterials scienceGrain boundaryPermittivityDielectricAtmospheric temperature rangeSurface layerAnnealing (metallurgy)Composite material

摘要: Low dielectric loss (tanδ   104) (La0.5Nb0.5)0.005Ti0.995O2 ceramics. The effects of annealing on two important relaxations, electron-pinned defect-dipole (EPDD), and Maxwell–Wagner polarization were explored. An enhancement activation energy (Ea) value a large distribution relaxation time τ detected in EPDD for the ceramics annealed at 1123 K. was destroyed, accompanied by disappearance CP high temperature range (> 1273 K). Impedance spectroscopy analysis suggested that grain boundary impedance could greatly enhanced as Strong electrode-material-dependent properties detected, tanδ observed after insulating surface layer removed. low ascribed to maintenance polarization, boundaries resistance, formation an through appropriate annealing.

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