Optical Characterization of Porous Materials
作者： U. Rossow
DOI: 10.1002/1521-396X(200103)184:1<51::AID-PSSA51>3.0.CO;2-Q
关键词: Characterization (materials science) 、 Analytical chemistry 、 Nanotechnology 、 Materials science 、 Porous medium
摘要:
harvard.edu
sci-hub.se 参考文章(68)
A. Naudon, P. Goudeau, V. Vezin, Scattering of X-rays Springer, Berlin, Heidelberg. pp. 255- 275 ,(1995) , 10.1007/978-3-662-03120-9_15
John Freserick Nye, Physical properties of crystals ,(1985)
Manuel Cardona, Peter Y. Yu, Fundamentals of Semiconductors ,(1995)
Yutaka Toyozawa, Masaharu Inoue, Teturo Inui, Makoto Okazaki, Eiichi Hanamura, Coexistence of Local and Band Characters in the Absorption Spectra of Solids I. Formulation Journal of the Physical Society of Japan. ,vol. 22, pp. 1337- 1349 ,(1967) , 10.1143/JPSJ.22.1337
K. Barla, G. Bomchil, R. Herino, J.C. Pfister, J. Baruchel, X-ray topographic characterization of porous silicon layers Journal of Crystal Growth. ,vol. 68, pp. 721- 726 ,(1984) , 10.1016/0022-0248(84)90110-6
James R. Chelikowsky, Marvin L. Cohen, Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors Physical Review B. ,vol. 14, pp. 556- 582 ,(1976) , 10.1103/PHYSREVB.14.556
A. Richter, P. Steiner, F. Kozlowski, W. Lang, Current-induced light emission from a porous silicon device IEEE Electron Device Letters. ,vol. 12, pp. 691- 692 ,(1991) , 10.1109/55.116957
L. T. Canham, Luminescence Bands and their Proposed Origins In Highly Porous Silicon physica status solidi (b). ,vol. 190, pp. 9- 14 ,(1995) , 10.1002/PSSB.2221900102
D. E. Aspnes, Approximate solution of ellipsometric equations for optically biaxial crystals Journal of the Optical Society of America. ,vol. 70, pp. 1275- 1277 ,(1980) , 10.1364/JOSA.70.001275
R. W. Godby, M. Schlüter, L. J. Sham, Accurate exchange-correlation potential for silicon and its discontinuity on addition of an electron. Physical Review Letters. ,vol. 56, pp. 2415- 2418 ,(1986) , 10.1103/PHYSREVLETT.56.2415