Phase change memory system having write driver
作者： Woo Jin Rim
DOI:
关键词: Memory refresh 、 Computer science 、 Memory cell 、 Interleaved memory 、 Sense amplifier 、 Registered memory 、 Computer hardware 、 Volatile memory 、 Semiconductor memory 、 Bubble memory
摘要: A phase change memory system capable of gradually reducing current at the time writing set data by using a small number control circuits while occupying dimension is disclosed. The includes cell array including plurality cells, each material which changed into or reset state depending on amount current, and write driver supplying corresponding to selected array. slow quenching unit an analog circuit slowly decreased in
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