作者: Mark E. Napierala , Tzu-Chen Lee , Dennis E. Vogel , Brian K. Nelson
DOI:
关键词: Dielectric 、 Substrate (printing) 、 Semiconductor 、 Electrode 、 Optoelectronics 、 Materials science 、 Pentacene 、 Thin-film transistor 、 Polymer 、 Inkwell
摘要: A method is provided for making a thin film transistor comprising the steps of: providing substrate; applying gate electrode ink by inkjet printing; dielectric over semiconductor and source drain printing. In some embodiments comprises solvent semiconducting material comprising: 1-99.9% weight of polymer; 0.1-99% functionalized pentacene compound as described herein.