作者: R. Sielemann
DOI: 10.1007/BF00567487
关键词: Impurity 、 Mössbauer spectroscopy 、 Interstitial defect 、 Semiconductor 、 Line (formation) 、 Electron density 、 Magnetic structure 、 Analytical chemistry 、 Atomic physics 、 Chemistry 、 Diffusion (business)
摘要: In-beam Mossbauer spectroscopy (IBMS) is used to study single isolated57Fe impurities after implantation in metals and semiconductors with very restricted or even vanishing solubility for Fe. From the parameters it can be inferred that Fe implants take up substitutional as well interstitial sites. The strongly increased electron density at position qualitatively explained by pressure resulting from small volume. In Si, Sc Pb exponential line broadening due diffusion has been observed. Additional information on dynamic behavior local magnetic structure some of systems presented comes perturbed angular distribution experiments (PAD) performed an isomeric state of54Fe.