Lead Telluride (PbTe)
作者： Sadao Adachi
DOI: 10.1007/978-1-4615-5247-5_58
关键词: Optoelectronics 、 Laser 、 Materials science 、 Temperature coefficient 、 Diode 、 Lead telluride 、 Heterojunction 、 High-κ dielectric 、 Semiconductor 、 Quantum well
摘要: Lead telluiide (PbTe) is a polar semiconductor crystallizing in the rocksalt-type lattice. It known that lead chalcogenides, PbS, PbSe, and PbTe, exhibit properties which are unusual, possibly unique, relative to other semiconductors. For example, they possess high dielectric constant, mobility, narrow fundamental gaps whose temperature coefficient positive [1]. These materials have been subject of many research efforts, due technical importance for use variety infrared optoelectronic device applications. Very low threshold-current laser diodes recently demonstrated single quantum wells based on PbTe/PbEuTeSe lattice-matched heterojunction system [2].
springer.com
sci-hub.st 参考文章(27)
Shu Yuan, Heinz Krenn, Gunther Springholz, Yukio Ueta, Günther Bauer, Patrick J. McCann, Magnetoreflectivity of Pb 1 − x Eu x Te epilayers and PbTe/ Pb 1 − x Eu x Te multiple quantum wells Physical Review B. ,vol. 55, pp. 4607- 4619 ,(1997) , 10.1103/PHYSREVB.55.4607
D. M. Korn, R. Braunstein, Reflectivity and Wavelength-Modulation-Derivative Reflectivity of Pb 1 − x Sn x Te Physical Review B. ,vol. 5, pp. 4837- 4848 ,(1972) , 10.1103/PHYSREVB.5.4837
Feng Weiting, Yan Yixun, Temperature effects on the refractive index of lead telluride and zinc selenide Infrared Physics. ,vol. 30, pp. 371- 373 ,(1990) , 10.1016/0020-0891(90)90055-Z
G. Martinez, M. Schlüter, Marvin L. Cohen, R. Pinchaux, P. Thiry, D. Dagneaux, Y. Petroff, Synchrotron radiation measurements and calculation of core to conduction level transitions in lead chalcogenides Solid State Communications. ,vol. 17, pp. 5- 9 ,(1975) , 10.1016/0038-1098(75)90322-1
Shu Yuan, H. Krenn, G. Springholz, G. Bauer, Dispersion of absorption and refractive index of PbTe and Pb1-xEuxTe (x<0.05) below and above the fundamental gap. Physical Review B. ,vol. 47, pp. 7213- 7226 ,(1993) , 10.1103/PHYSREVB.47.7213
J. R. Lowney, S. D. Senturia, Optical dielectric constant of Pb1−xSnxTe in the narrow‐gap region Journal of Applied Physics. ,vol. 47, pp. 1771- 1774 ,(1976) , 10.1063/1.322889
H. Burkhard, G. Bauer, A. Lopez-Otero, Submillimeter spectroscopy of TO-phonon mode softening in PbTe Journal of the Optical Society of America. ,vol. 67, pp. 943- 946 ,(1977) , 10.1364/JOSA.67.000943
S. E. Kohn, P. Y. Yu, Y. Petroff, Y. R. Shen, Y. Tsang, M. L. Cohen, ELECTRONIC BAND STRUCTURE AND OPTICAL PROPERTIES OF PbTe, PbSe, AND PbS Physical Review B. ,vol. 8, pp. 1477- 1488 ,(1973) , 10.1103/PHYSREVB.8.1477
S. Nishi, H. Kawamura, K. Murase, Study of Lattice Instability by mm-Wave Magnetoplasma Reflection in PbTeSnTe Compound Semiconductors physica status solidi (b). ,vol. 97, pp. 581- 590 ,(1980) , 10.1002/PSSB.2220970224
S. L. McCarthy, W. H. Weber, M. Mikkor, Optical absorption in epitaxial PbTe films on BaF2 Journal of Applied Physics. ,vol. 45, pp. 4907- 4911 ,(1974) , 10.1063/1.1663152