The effect of growth oxygen pressure on the metal–insulator transition of ultrathin Sm0.6Nd0.4NiO3−δ epitaxial films
作者： Haoliang Huang , Zhenlin Luo , Yuanjun Yang , Mengmeng Yang , Haibo Wang
DOI: 10.1039/C4RA09535A
关键词: X-ray photoelectron spectroscopy 、 Pulsed laser deposition 、 Single crystal 、 Epitaxy 、 Analytical chemistry 、 Transition temperature 、 Oxygen 、 Metal–insulator transition 、 Materials science 、 Oxygen pressure
摘要: Ultrathin Sm0.6Nd0.4NiO3−δ epitaxial films were deposited by pulsed laser deposition (PLD) onto LaAlO3 (LAO) single crystal substrates. The influence of growth oxygen pressure on the metal–insulator transition (MIT) was investigated. It found that MI temperature (TMI) decreases remarkably with decrease pressure, while films' strain state stays almost same. increased vacancies induced lower verified X-ray photoelectron spectroscopy, seem to be main cause such phenomena.
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