van der Waals epitaxy of Ge films on mica

摘要: To date, many materials have been successfully grown on substrates through van der Waals epitaxy without adhering to the constraint of lattice matching as is required for traditional chemical epitaxy. However, elemental semiconductors such Ge, this has challenging and therefore it not achieved thus far. In paper, we report observation Ge epitaxially mica at a narrow substrate temperature range around 425 °C. Despite large mismatch (23%) lack high in-plane symmetry in surface, an epitaxial film with [111] out-of-plane orientation observed. Crystallinity electrical properties degrade upon deviation from ideal growth temperature, shown by Raman spectroscopy, X-ray diffraction, Hall effect measurements. pole figure analysis reveals that there exist multiple rotational domains dominant orientations between 1¯10 mica[100] (20n)°, where n = 0, 1, 2, 3, 4, 5. A supe...