Radio-frequency power amplifier with input impedance matching circuit based on harmonic wave
作者： Hiroyasu Takehara , Maeda Masahiro , Osamu Ishikawa
DOI:
关键词: Amplifier 、 RF power amplifier 、 Output impedance 、 FET amplifier 、 Standing wave ratio 、 Characteristic impedance 、 Line (electrical engineering) 、 Engineering 、 Input impedance 、 Electrical engineering
摘要: In an RF power amplifier, input-side terminal is connected to a gate of FET via matching line. A source the grounded. drain output-side To line FET, circuit for controlling output impedance secondary harmonic wave connected, including first and capacitor. input second The length set so that electric thereof becomes longer than one-fourth wavelength fundamental frequency. Thus, controlled at side transistor.
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