Nanostructure Study of Ti/TiN Multilayers: Effect of the Deposition Temperature
作者： S. Labdi , C. Sant , L. Hennet , Ph. Houdy
DOI: 10.1557/PROC-441-711
关键词: Materials science 、 Layer (electronics) 、 Ultra-high vacuum 、 Nanostructure 、 Metallurgy 、 Analytical chemistry 、 Tin 、 Deposition (law) 、 Ellipsometry 、 Titanium 、 Sputtering
摘要: In this paper, we report on the growth and study of Ti/TiN nanometric multilayers. The preparation these films has been carried out by high vacuum diode r.f. sputtering. Growth was in-situ monitored kinetic ellipsometry. Deposition temperature kept to room low (-120°C) respectively in order modify interface properties consequently understand effect interfaces film's mechanical properties. thickness each layer varied from 1 nm 10 alternately repeated obtain a total 200 nm. After deposition, were characterized means X-ray diffraction grazing reflectometry for structural determination. This shows that TiN-Ti boundary is composed TiN x , with going nominal nitrogen concentration 0. can be due either surface reaction incident titanium during Ti sequence present at film or target sequence.
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