Characterization of porous silicon by Raman scattering and photoluminescence
作者： J Zuk , M Kulik , G.T Andrews , H Kiefte , M.J Clouter
DOI: 10.1016/S0040-6090(96)09532-6
关键词: Phonon 、 Materials science 、 Porosity 、 Doping 、 Optics 、 Photoluminescence 、 Raman scattering 、 Raman spectroscopy 、 X-ray Raman scattering 、 Molecular physics 、 Porous silicon
摘要: Abstract The structural and light-emitting properties of porous Si prepared from differently doped p-type (111) substrates have been studied by Raman scattering photoluminescence (PL). A detailed analysis the line shapes was performed using a quantum phonon confinement model with realistic LO TO dispersion curves. Prevailing nanocrystallite types (spheres or wires) characteristic sizes were determined for samples porosities 30 to 80%. highly consist fine spheres, while those lower porosity are mostly wire-like. PL spectra less size-sensitive than ones no clear correlation between information has observed. © 1997 Elsevier Science S.A.
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