作者: Gary S. Selwyn
DOI: 10.1116/1.575597
关键词: Process control 、 Plasma diagnostics 、 Nanotechnology 、 Semiconductor device 、 Ion 、 Etching (microfabrication) 、 Laser 、 Reactive-ion etching 、 Chemistry 、 Plasma
摘要: Reactive ion etching is the current process of choice for production high‐speed integrated circuits; yet development and use this technology has evolved largely through empirical efforts. Beam/surface studies have proven instrumental in examining fundamental issues etching; however, extension these results to plasmas requires considerable extrapolation. Laser diagnostic measurements may be used as a bridge between UHV plasma, role which possible due high specificity sensitivity techniques. Spatially resolved laser provide three‐dimensional situ measurement concentration gradients reactive etchants ions plasma. Key plasma such O Cl studied using two‐photon excitation processes. Finally, emerging lasers control applications discussed compared with conventional approaches, optical emission end‐point detection.