Laser diagnostic techniques for reactive ion etching: Plasma understanding to process control

作者: Gary S. Selwyn

DOI: 10.1116/1.575597

关键词: Process controlPlasma diagnosticsNanotechnologySemiconductor deviceIonEtching (microfabrication)LaserReactive-ion etchingChemistryPlasma

摘要: Reactive ion etching is the current process of choice for production high‐speed integrated circuits; yet development and use this technology has evolved largely through empirical efforts. Beam/surface studies have proven instrumental in examining fundamental issues etching; however, extension these results to plasmas requires considerable extrapolation. Laser diagnostic measurements may be used as a bridge between UHV plasma, role which possible due high specificity sensitivity techniques. Spatially resolved laser provide three‐dimensional situ measurement concentration gradients reactive etchants ions plasma. Key plasma such O Cl studied using two‐photon excitation processes. Finally, emerging lasers control applications discussed compared with conventional approaches, optical emission end‐point detection.

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