作者: A. F. W. Willoughby , C. M. H. Driscoll , B. A. Bellamy
DOI: 10.1007/BF00549684
关键词: Arsenic 、 Stoichiometry 、 Gallium arsenide 、 Doping 、 Materials science 、 Homogeneity (physics) 、 Lattice constant 、 Epitaxy 、 Analytical chemistry 、 Gallium 、 Crystallography
摘要: An automatic method of precision lattice parameter measurement, capable repeated measurement at intervals across single crystals with an accuracy better than one part in 106, has been applied to gallium arsenide. The technique used compare homogeneity material grown from the melt that prepared by vapour and liquid epitaxy, study under various pressures arsenic, investigate effect heavy doping on parameter. is shown provide new interesting information defects