A study of non-stoichiometry in gallium arsenide by precision lattice parameter measurements

作者: A. F. W. Willoughby , C. M. H. Driscoll , B. A. Bellamy

DOI: 10.1007/BF00549684

关键词: ArsenicStoichiometryGallium arsenideDopingMaterials scienceHomogeneity (physics)Lattice constantEpitaxyAnalytical chemistryGalliumCrystallography

摘要: An automatic method of precision lattice parameter measurement, capable repeated measurement at intervals across single crystals with an accuracy better than one part in 106, has been applied to gallium arsenide. The technique used compare homogeneity material grown from the melt that prepared by vapour and liquid epitaxy, study under various pressures arsenic, investigate effect heavy doping on parameter. is shown provide new interesting information defects

参考文章(37)
T. W. Baker, J. D. George, B. A. Bellamy, R. Causer, FULLY AUTOMATED HIGH-PRECISION X-RAY DIFFRACTION. Advances in x-ray analysis. ,vol. 11, pp. 359- 375 ,(1967) , 10.1007/978-1-4684-8676-6_29
Kurt F.J. Heinrich, Advances in X-Ray Analysis ,(1978)
L.J. Vieland, The effect of arsenic pressure on impurity diffusion in gallium arsenide Journal of Physics and Chemistry of Solids. ,vol. 21, pp. 318- 320 ,(1961) , 10.1016/0022-3697(61)90114-7
D. Laister, G. M. Jenkins, Stacking-faults in tellurium-doped gallium arsenide Journal of Materials Science. ,vol. 3, pp. 584- 589 ,(1968) , 10.1007/BF00757903
H. Kressel, H. Nelson, S. H. McFarlane, M. S. Abrahams, P. LeFur, C. J. Buiocchi, Effect of Substrate Imperfections on GaAs Injection Lasers Prepared by Liquid‐Phase Epitaxy Journal of Applied Physics. ,vol. 40, pp. 3587- 3597 ,(1969) , 10.1063/1.1658242
S. W. Kurnick, The Effects of Hydrostatic Pressure on the Ionic Conductivity of AgBr The Journal of Chemical Physics. ,vol. 20, pp. 218- 228 ,(1952) , 10.1063/1.1700382
Sumitada Asano, Yasuo Tomishima, Lattice Defects in Zincblende Part II. Formation Energy of Lattice Defects. Journal of the Physical Society of Japan. ,vol. 13, pp. 1126- 1137 ,(1958) , 10.1143/JPSJ.13.1126
B.G. Cohen, M.W. Focht, X-ray measurement of elastic strain and annealing in semiconductors Solid-State Electronics. ,vol. 13, pp. 105- 112 ,(1970) , 10.1016/0038-1101(70)90040-7
A. D. Kurtz, S. A. Kulin, B. L. Averbach, Effect of Dislocations on the Minority Carrier Lifetime in Semiconductors Physical Review. ,vol. 101, pp. 1285- 1291 ,(1956) , 10.1103/PHYSREV.101.1285
M.S. Seltzer, Diffusion of manganese into gallium arsenide Journal of Physics and Chemistry of Solids. ,vol. 26, pp. 243- 250 ,(1965) , 10.1016/0022-3697(65)90151-4