作者: Qiu-Hong Wang , Chao-Long Tang , Cheng-Ming Jiang , Dan-Feng Du , Feng Wang
DOI: 10.1007/S40195-016-0383-4
关键词: Sputtering 、 Number density 、 Isotropic etching 、 Nanowire 、 Nanotechnology 、 Optoelectronics 、 Materials science 、 Silicon 、 Nucleation 、 Surface finish 、 Layer (electronics) 、 Industrial and Manufacturing Engineering 、 Metals and Alloys
摘要: The role of substrate roughness in ZnO nanowire (NW) arrays hydrothermal growth has been systematically studied. Six silicon substrates with different by chemical etching have selected to grow NW hydrothermally after sputtering 5-nm-thick seed layer as catalyst. as-grown samples reveal that average diameters and number densities are inversely proportional the increasing observed atomic-force microscopy scanning electron microscopy. Furthermore, theoretically derived equations based on nucleation Gibbs free energy describe relations versus diameter density match well experimental results. Research results this paper can be used control alternating roughness.