Co-sputtered tantalum-doped tin oxide thin films for transparent conducting applications

摘要: Abstract A transparent conducting material combines high electrical conductivity with optical transparency. Such materials are actively sought for their applications in optoelectronic devices and consumer electronics. Undoped tin oxide is a wide-bandgap semiconductor that optically the visible range but lacks necessary its function as conductor. In this study, conductive thin films were obtained through extrinsic doping tantalum, which considered one of best dopants due to oxidation state smaller ionic radius than tin. The deposited by co-sputtering; radio-frequency sputtering was applied oxide, then variable-power direct-current tantalum achieve concentrations 2.6–15.5 at%. resulting highly transparent, bandgap 4.1–4.2 eV minimum resistivity 2.44 × 10−3 Ω cm, corresponding Hall mobility 8.62 cm2/V⋅s. suitability these conductors evaluated.