Ferroelectric behaviors and charge carriers in Nd-doped Bi4Ti3O12 thin films
作者： X. S. Gao , J. M. Xue , J. Wang
DOI: 10.1063/1.1834986
关键词: Space charge 、 Ferroelectricity 、 Condensed matter physics 、 Dielectric 、 Thin film 、 Perovskite (structure) 、 Materials science 、 Atmospheric temperature range 、 Coercivity 、 Sputter deposition 、 General Physics and Astronomy
摘要: Nd-doped Bi4Ti3O12 thin films, (Bi3.25Nd0.85)4Ti3O12, of layered perovskite structure were synthesized by rf sputtering, followed postannealing at 600–700°C. They show enhanced ferroelectricity with rising temperature in the range 650–750°C. When annealed 700°C, a remanent polarization 2Pr 25.2μC∕cm2 and coercive field Ec 87.2kV∕cm measured 9V, together an almost fatigue-free behavior up to 1.4×1010 switching cycles. Their ferroelectric, dielectric, ac conductivity properties over from 25to300°C studied frequency 0.1–1MHz. Space-charge relaxation oxygen vacancies was shown play important role determining dielectric behaviors films.
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