Electronic Properties of AlxGa1—xAsySb1—y Alloys Lattice‐Matched to InAs
作者： N. Bouarissa , R. Bachiri , Z. Charifi
DOI: 10.1002/1521-3951(200108)226:2<293::AID-PSSB293>3.0.CO;2-C
关键词: Lattice (order) 、 Electronic structure 、 Electronic band structure 、 Pseudopotential 、 Mineralogy 、 Chemistry 、 Effective mass (solid-state physics) 、 Direct and indirect band gaps 、 Electron 、 Condensed matter physics 、 Band gap
摘要: The electronic properties of zinc‐blende AlxGa1—xAsySb1—y quaternary alloys lattice‐matched to InAs have been investigated by using a pseudopotential method under the …
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