作者: D. Murrell , M. T. Crowley , M. Breivik , R. Raghunathan , A. Aboketaf
关键词: Laser 、 Optoelectronics 、 Multiplexing 、 Bandwidth (signal processing) 、 Transmitter 、 Quantum dot laser 、 Detector 、 Chip 、 Diode 、 Materials science
摘要: Optical interconnects have been highlighted as a key technology to alleviate the shortcomings inherent traditional inter-chip copper in terms of bandwidth, power consumption and reliability [1]. In particular, monolithic two-section quantum dot passively mode-locked laser (QDMLL) has emerged an impressive low noise source pico-second optical pulses [2]. As well its compact size direct electrical pumping, QDMLL emits at wavelengths compatible with Si-based waveguides detectors. For use interconnects, ideally, transmitter will be situated close CPU cores therefore need operate over broad temperature range, highs typically vicinity 100 °C. It is desirable develop uncooled firstly reduce system complexity secondly eliminate power-hungry cooling requirements associated diode lasers. this paper, we discuss our approach developing uncooled, ultra energy/bit QD MLL transmitters capable providing high quality pulse trains suitable for multiplexing up 100s Gbps level. Up until now analytical method guide design resistant MLLs based on convenient, measureable material parameters not existed.