X-ray detector including oxide semiconductor transistor
作者： Sang-Wook Kim , Sun-Il Kim , Chang-Jung Kim , Jae-Chul Park
DOI:
关键词: Thin-film transistor 、 Gallium 、 Field-effect transistor 、 Optoelectronics 、 Organic field-effect transistor 、 Substrate (electronics) 、 Materials science 、 Indium 、 Oxide thin-film transistor 、 Transistor
摘要: Example embodiments are directed an X-ray detector including oxide semiconductor transistor. The the transistor includes and a signal storage capacitor in parallel to each other on substrate. channel formed of material, photoconductor. A pixel electrode common opposite surfaces ZnO, or compound ZnO at least one selected from group consisting gallium (Ga), indium (In), hafnium (Hf), tin (Sn).
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