Bound states at partial dislocation defects in multipole higher-order topological insulators.

摘要: The bulk-boundary correspondence, which links a bulk topological property of material to the existence robust boundary states, is hallmark insulators. However, in crystalline materials presence states insulating gap not always necessary since they can be hidden energy bands, obscured by artifacts non-topological origin, or, case higher-order topology, gapped altogether. Crucially, such systems interplay between symmetry-protected topology and corresponding symmetry defects provide variety probes reveal their nature. For example, crystallographic defects, as disclinations dislocations, have been shown bind fractional charges and/or localized bound insulators protected symmetries. Recently, exotic translation called partial dislocations proposed probe topology. it herculean task experimental control over generation probing isolated solid-state systems; hence use faces many challenges. Instead, here we show that dislocation are ideally suited context engineered materials. Indeed, present first observations partial-dislocation-induced modes 2D 3D built from circuit-based resonator arrays. While rotational (disclinations) previously indicate our work provides evidence (partial dislocations) probes.