Process for producing crackstops on semiconductor devices and devices containing the crackstops
作者： Eric Jeffrey White
DOI:
关键词: Optoelectronics 、 Process (computing) 、 Semiconductor device 、 Dielectric 、 Materials science 、 Chip 、 Metallizing 、 Groove (engineering) 、 Etching 、 Electronic engineering 、 Passivation
摘要: A process for making a crackstop on semiconductor device is disclosed. The involves creating and metallizing groove surrounding the active region chip at same time as other functional metallization occurring, then selectively etching out metal in after final passivation. In various embodiments passes through surface dielectric or substrate. one embodiment replaced by hollow rings that can be stacked multiple layers.
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