Manipulating a Co adatom on a stepped Cu surface by an STM tip: A theoretical study
作者： L. Liu , R.Z. Huang , Y.S.N. Sun , C.C. Du , R.J. Zhang
DOI: 10.1016/J.APSUSC.2013.11.093
关键词: Voltage 、 Molecular physics 、 Crystallography 、 Ab initio 、 Biasing 、 Chemistry 、 Scanning tunneling microscope 、 Surface (mathematics) 、 Zero bias
摘要: Abstract A successful atomic manipulation may be influenced by many factors such as bias voltage, tip structure and modes et al. Here, performing atomic-scale simulations with ab initio based many-body potentials, we have studied the vertical lateral of a single Co adatom on metallic Cu surfaces using STM tips at zero voltage. suitable scheme for manipulating Cu(5 5 4) surface is proposed. The optimum height determined reliability stepped assessed.
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