The incorporation of the ionization effect in organic semiconductors assists in triggering multilevel resistive memory behaviors

作者: Cheng Zhang , Hua Li , Yanna Su , Fei Yu , Chao Li

DOI: 10.1039/D0QM00471E

关键词: Ionic bondingMoleculeSmall moleculeTernary operationOrganic semiconductorIonResistive random-access memoryMaterials scienceChemical physicsMolecular dynamics

摘要: The introduction of the ionization effect into organic small molecules could be a promising strategy for modulating their memory behaviors. Herein, two new ionic and zwitterionic D/A-conjugated (LD-IOM LD-ZIOM) have been prepared via salification further zwitterionization from neutral parent structure LD, pyridine-based molecule. Incredible blue-shifting absorptions LD-IOM LD-ZIOM by 44 88 nm, respectively, were observed as compared with LD. Molecular dynamics simulations suggest preferential molecular packing modes J-, Slide-H- H-aggregations LD-ZIOM, which are in good agreement experimental results. LD-based devices exhibited binary WORM-type performance probability minor misreading, while LD-ZIOM-based revealed upgraded ternary counterions manifested an induction on orientations caused separate threshold voltage distributions, attributed to ion fractionation migration effect.

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