Dielectric properties and field-induced phase switching of lead zirconate titanate stannate antiferroelectric thick films on silicon substrates

摘要: Thick (∼5 μm) films of antiferroelectric compositions in the lead zirconate titanate stannate family solid state solutions have been fabricated by sol–gel methods on platinum-buffered silicon substrates. Dielectric properties, electric field induced ferroelectric polarization, and associated elastic strain temperature dependence dielectric response explored as a function composition. Films with high tin content are shown to undergo diffuse antiferroelectric–paraelectric phase transition temperature, probably because compositional inhomogeneity content. This type film also demonstrates field-induced antiferroelectric–ferroelectric switching under appearance “slim loop” double hysteresis, which can be attributed heterogeneity level tensile stress thermal mismatch between substrate. On other hand, wit...