An analytical subthreshold current model for ferroelectric SiGe-on-insulator field effect transistor (FSGOIFET)
作者： Monika Bansal , Harsupreet Kaur
关键词: Device parameters 、 Drain-induced barrier lowering 、 Optoelectronics 、 Subthreshold conduction 、 Materials science 、 Field-effect transistor 、 Insulator (electricity) 、 Threshold voltage 、 Subthreshold swing 、 Ferroelectricity
摘要: In this paper, a novel device concept has been presented which integrates ferroelectric gate insulator on SiGe-On-insulator (SGOI) substrate. An analytical subthreshold current model for SGOI field effect transistor (FSGOIFET) developed by using 2D Poisson's equation and Landau–Khalatnikov equation. The explicit expressions threshold voltage have obtained extending the electrostatic potential model. other important parameters such as drain induced barrier lowering, roll-off, swing etc to quantitatively study performance of FSGOIFET at shorter channel length. merits demonstrated comparing all characteristics with those SGOIFET. excellent fit results simulation from Silvaco ATLAS TCAD corroborated accuracy
harvard.edu
sci-hub.se 参考文章(42)
R. W. D. Nickalls, A New Approach to Solving the Cubic: Cardan's Solution Revealed The Mathematical Gazette. ,vol. 77, pp. 354- 359 ,(1993) , 10.2307/3619777
H. von Känel, E.H.C. Parker, U. König, M. Myronov, S. Durov, T. Hackbarth, D.R. Leadley, G. Höck, T.E. Whall, H.-J. Herzog, O.A. Mironov, p-Si0.3Ge0.7 and p-Si0.2Ge0.8 MOSFETs of enhanced performance ,(2003)
Yang Li, Yong Lian, Kui Yao, Ganesh S. Samudra, Evaluation and optimization of short channel ferroelectric MOSFET for low power circuit application with BSIM4 and Landau theory Solid-state Electronics. ,vol. 114, pp. 17- 22 ,(2015) , 10.1016/J.SSE.2015.07.001
Ali A. Orouji, Alireza Mohtasham, Moein Eslami Jam, A SiGe on insulator MOSFET to improve the electrical performances: Amended channel band energy Materials Science in Semiconductor Processing. ,vol. 40, pp. 527- 532 ,(2015) , 10.1016/J.MSSP.2015.07.002
Zhi-Yuan Cheng, M.T. Currie, C.W. Leitz, G. Taraschi, A. Pitera, M.L. Lee, T.A. Langdo, J.L. Hoyt, D.A. Antoniadis, E.A. Fitzgerald, SiGe-On-Insulator (SGOI): substrate preparation and MOSFET fabrication for electron mobility evaluation international soi conference. pp. 13- 14 ,(2001) , 10.1109/SOIC.2001.957961
Zhiyuan Cheng, Dimitri A. Antoniadis, Eugene A. Fitzgerald, SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication ,(2002)
T. Tezuka, N. Sugiyama, S. Takagi, Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction Applied Physics Letters. ,vol. 79, pp. 1798- 1800 ,(2001) , 10.1063/1.1404409
Alexandru Rusu, Giovanni A Salvatore, David Jimenez, Adrian M Ionescu, None, Metal-Ferroelectric-Meta-Oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification international electron devices meeting. ,(2010) , 10.1109/IEDM.2010.5703374
Jongwan Jung, M.L. Lee, Shaofeng Yu, E.A. Fitzgerald, D.A. Antoniadis, Implementation of both high-hole and electron mobility in strained Si/strained Si 1-y Ge y on relaxed Si 1-x Ge x (x<y) virtual substrate IEEE Electron Device Letters. ,vol. 24, pp. 460- 462 ,(2003) , 10.1109/LED.2003.814028
S. Verdonckt-Vandebroek, E.F. Crabbe, B.S. Meyerson, D.L. Harame, P.J. Restle, J.M.C. Stork, J.B. Johnson, SiGe-channel heterojunction p-MOSFET's IEEE Transactions on Electron Devices. ,vol. 41, pp. 90- 101 ,(1994) , 10.1109/16.259625