Surface processes controlling MBE heterojunction formation: GaAs(100)/Ge interfaces

摘要: In situ LEED and synchrotron radiation photoemission spectroscopy were performed on Ge interfaces grown by MBE GaAs(100) surfaces ranging from the As‐rich c(4×4) to Ga‐rich 4×6 ordered surface phases. By comparison bulk c‐GeAs, we find that when lattice‐matched heterojunctions are GaAs surfaces, GeAs forms an 3×1 phase at free of Ge(110) a two‐domain (2×1) Ge(100). The GeAsx Ge(100): As is obtained independent initial concentration. Further, outdiffusion does not occur during deposition Ge; rather, observe enrichment coverage corresponding diffusion interface layer, while lowering energy layers, also changes band‐gap offset.