100 GHz bandwidth planar GaAs Schottky photodiode
作者： S.Y. Wang , D.M. Bloom
DOI: 10.1049/EL:19830376
关键词: Photodiode 、 Full width at half maximum 、 Bandwidth (signal processing) 、 Schottky diode 、 Wavelength 、 Gallium arsenide 、 Semiconductor 、 Optics 、 Optoelectronics 、 Laser 、 Materials science
摘要: In the letter we report development and characterisation of a planar-structure GaAs Schottky-barrier photodiode whose response to mode-locked laser pulse 600 nm wavelength has full-width half-maximum 5.4 ps 3 dB bandwidth 100 GHz.
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sci-hub.se 参考文章(2)
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J. A. Valdmanis, G. Mourou, C. W. Gabel, Picosecond electro‐optic sampling system Applied Physics Letters. ,vol. 41, pp. 211- 212 ,(1982) , 10.1063/1.93485