Photoluminescence properties of ZnS epilayers
作者： T. K. Tran , W. Park , W. Tong , M. M. Kyi , B. K. Wagner
DOI: 10.1063/1.363937
关键词: Exciton 、 Chemical beam epitaxy 、 Materials science 、 Band gap 、 Molecular physics 、 Laser linewidth 、 Analytical chemistry 、 Phonon 、 Photoluminescence 、 Molecular beam epitaxy 、 Thin film
摘要: A comprehensive study is reported of the photoluminescence properties ZnS thin films between 1.6 and 320 K grown by metalorganic molecular beam epitaxy chemical on GaAs substrates. Both heavy- light-hole free excitons were observed at low temperatures with linewidths 7.0 5.3 meV, respectively, as well donor- acceptor-bound free-to-bound recombination along their longitudinal optical (LO) phonon replicas. The exciton emission was up to K, enabled room temperature band gap be unambiguously determined 3.723 eV. dependence peak position, intensity, linewidth described conventional empirical relations Toyozawa’s line shape theory. bound positions found follow whereas feature displaced (1/2)kT above energy. Thermal quenching donor-bound...
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