Comparison of ultralow specific on-resistance UMOSFET structures: the ACCUFET, EXTFET, INVFET, and conventional UMOSFET's
作者： Tsengyou Syau , P. Venkatraman , B.J. Baliga
DOI: 10.1109/16.285034
关键词: Vertical channel 、 Optoelectronics 、 Trench gate 、 On resistance 、 Electrical engineering 、 Current conduction 、 Materials science 、 Trench
摘要: Three new ultralow specific on-resistance, vertical channel, power UMOSFET structures, with a trench (UMOS) gate extending all the way between N/sup +/ source and substrate (drain), are compared conventional structure. Specific on-resistances in range of 100-250 /spl mu//spl Omega/cm/sup 2/ have been experimentally demonstrated for devices capable supporting 25 V. This is due to current conduction via an accumulation and/or inversion layer formed under bias along surface, resulting lowest on-resistance ever reported. >
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