Residual resistivity of (Ga,Mn)As alloys from ab initio calculations

作者: I. Turek , J. Kudrnovský , V. Drchal , P. Weinberger

DOI: 10.1016/J.JMMM.2003.12.455

关键词: ImpurityScatteringCurie temperatureMagnetic semiconductorCondensed matter physicsMaterials scienceResidual resistivityElectrical resistivity and conductivityAb initio quantum chemistry methodsKubo formula

摘要: Abstract The residual resistivity of diluted (Ga,Mn)As magnetic semiconductors with native compensating defects (As-antisites, Mn-interstitials) is calculated from first principles using the Kubo–Greenwood linear response theory. concentration variations reflect strength impurity scattering and number carriers. In agreement a recent experiment, resistivities are strongly correlated alloy Curie temperatures evaluated in terms classical Heisenberg Hamiltonian.

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