The impact of the Fermi-Dirac distribution on charge injection at metal/organic interfaces.
作者： ZB Wang , MG Helander , MT Greiner , ZH Lu , None
DOI: 10.1063/1.3424762
关键词: Organic semiconductor 、 Condensed matter physics 、 Delocalized electron 、 Fermi level 、 Metal-induced gap states 、 Semiconductor device 、 Fermi–Dirac statistics 、 Energy level 、 Semiconductor 、 Materials science
摘要: The Fermi level has historically been assumed to be the only energy-level from which carriers are injected at metal/semiconductor interfaces. In traditional semiconductor device physics, this approximation is reasonable as thermal distribution of delocalized states in tends dominate characteristics. However, case organic semiconductors weak intermolecular interactions results highly localized electronic states, such that metal may also influence work we demonstrate Fermi-Dirac a much more significant impact on charge injection metal/organic interfaces than previously assumed. An model includes effect electron was proposed. This tested against experimental data and found provide better physical description injection. finding indicates should, general, considered study
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