Impact of precursor chemistry on atomic layer deposition of lutetium aluminates
作者： Laura Nyns , Xiaoping Shi , Hilde Tielens , Sven Van Elshocht , Lucien Date
DOI: 10.1116/1.3662838
关键词: Dielectric 、 Lutetium 、 Cyclopentadienyl complex 、 Chemistry 、 Aluminium 、 Inorganic chemistry 、 Atomic layer deposition 、 Non-volatile memory 、 Germanium 、 Layer (electronics)
摘要: Rare earth-based oxides are of interest for their potential application in future logic high-performance technologies where Germanium is the channel material. In addition, aluminates considered as promising high-k dielectrics nonvolatile memory technologies. However, it has been found that dielectric quality these materials highly dependent on method preparation. The authors have therefore examined atomic layer deposition (ALD) LuxAl2−xO3 layers by means Tris(isopropyl cyclopentadienyl) Lutetium (Lu(iPrCp)3), Tris(diethyl-amido)aluminum and H2O or O3 a nanolaminate approach. This manuscript covers impact oxidizer both ALD process characteristics properties. Because hygroscopic nature rare earth oxides, O3-based well controlled compared to H2O-based process. On other hand, grown with show better electrical properties terms Equivalent ...
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