作者: A. E. Lee , C. E. Platt , J. F. Burch , R. W. Simon , J. P. Goral
DOI: 10.1063/1.104153
关键词: Thin film 、 Mineralogy 、 Carbon film 、 Scanning electron microscope 、 Sputtering 、 Transmission electron microscopy 、 Crystal growth 、 Optoelectronics 、 Epitaxy 、 Dielectric 、 Materials science
摘要: We have grown crystalline thin films of LaAlO3 using off‐axis rf sputtering from a single stoichiometric target. The grow epitaxially on SrTiO3 and LaAlO3 (100) substrates as well YBa2Cu3O7 films. report the growth conditions used to make these films, properties bilayer trilayer structures containing both Transmission electron microscopy cross‐sectional x‐ray diffraction analyses indicate that all constituent in multilayers interfaces between are sharply defined. Preliminary transport measurements show can be for dielectric layers variety high‐temperature superconductor electronic circuits.