作者: A. K. Sharma , Hardik Kalasua , Sandeep Kumbhar , K. L. Narasimhan , B. M. Arora
DOI: 10.1109/ICEMELEC.2016.8074625
关键词: Optoelectronics 、 Sheet resistance 、 Electrical engineering 、 Equivalent series resistance 、 Common emitter 、 Silicon 、 Engineering 、 Photoluminescence
摘要: Photoluminescence imaging under different bias conditions is used to obtain maps of the local series resistance and ideality factor in large area industrial silicon solar cells. The variation correlates with variations emitter sheet resistance.