Dislocation Nucleation in Heteroepitaxial Semiconducting Films
作者： Bernard Pichaud , N. Burle , Michael Texier , C. Fontaine , V.I. Vdovin
DOI: 10.4028/WWW.SCIENTIFIC.NET/SSP.156-158.251
关键词: Nucleation 、 Materials science 、 Dislocation 、 Crystallography 、 Anisotropy 、 Crystallographic defect 、 Relaxation (NMR) 、 Condensed matter physics 、 Vicinal 、 Semiconductor 、 Layer (electronics)
摘要: The nucleation of dislocation in semiconductors is still a matter debate and especially heteroepitaxial films. To understand this process the classical models are presented discussed. Two main points then developed: emission dislocations from surface steps role point defects agglomeration on nucleation. Recent atomic simulation half loops experimental evidences anisotropic relaxation GaInAs films deposited vicinal (111) GaAs substrates strongly support as preferential sites for In low temperature buffer layer structures (SiGe/Si) an original structure observed which corresponds to different glide systems by unique centre.
sci-hub.se 参考文章(26)
R. Hull, E. A. Stach, R. Tromp, F. Ross, M. Reuter, Interactions of Moving Dislocations in Semiconductors with Point, Line and Planar Defects Physica Status Solidi (a). ,vol. 171, pp. 133- 146 ,(1999) , 10.1002/(SICI)1521-396X(199901)171:1<133::AID-PSSA133>3.0.CO;2-D
J Rabier, P Cordier, J.L Demenet, H Garem, Plastic deformation of Si at low temperature under high confining pressure Materials Science and Engineering A-structural Materials Properties Microstructure and Processing. ,vol. 309, pp. 74- 77 ,(2001) , 10.1016/S0921-5093(00)01770-6
Tetsuji Ueno, Toshifumi Irisawa, Yasuhiro Shiraki, Akira Uedono, Shoichiro Tanigawa, Ryoichi Suzuki, Toshiyuki Ohdaira, Tomohisa Mikado, Characterization of low temperature grown Si layer for SiGe pseudo-substrates by positron annihilation spectroscopy Journal of Crystal Growth. ,vol. 227, pp. 761- 765 ,(2001) , 10.1016/S0022-0248(01)00822-3
J. Godet, L. Pizzagalli, S. Brochard, P. Beauchamp, Theoretical study of dislocation nucleation from simple surface defects in semiconductors Physical Review B. ,vol. 70, pp. 054109- ,(2004) , 10.1103/PHYSREVB.70.054109
J. C. Bean, L. C. Feldman, A. T. Fiory, S. Nakahara, I. K. Robinson, GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy Journal of Vacuum Science and Technology. ,vol. 2, pp. 436- 440 ,(1984) , 10.1116/1.572361
A. Sacedón, F. Calle, A. L. Alvarez, E. Calleja, E. Muñoz, R. Beanland, P. Goodhew, Relaxation of InGaAs layers grown on (111)B GaAs Applied Physics Letters. ,vol. 65, pp. 3212- 3214 ,(1994) , 10.1063/1.112415
M. Heggie, R. Jones, Solitons and the electrical and mobility properties of dislocations in silicon Philosophical Magazine Part B. ,vol. 48, pp. 365- 377 ,(1983) , 10.1080/13642818308246488
M. S. Duesbery, B. Joos, D. J. Michel, Dislocation core studies in empirical silicon models Physical Review B. ,vol. 43, pp. 5143- 5146 ,(1991) , 10.1103/PHYSREVB.43.5143
E. Kasper, H. J. Herzog, H. Kibbel, A one-dimensional SiGe superlattice grown by UHV epitaxy Applied physics. ,vol. 8, pp. 199- 205 ,(1975) , 10.1007/BF00896611
A. P. Knights, R. M. Gwilliam, B. J. Sealy, T. J. Grasby, C. P. Parry, D. J. F. Fulgoni, P. J. Phillips, T. E. Whall, E. H. C. Parker, P. G. Coleman, Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures Journal of Applied Physics. ,vol. 89, pp. 76- 79 ,(2001) , 10.1063/1.1329145