High-performance flexible graphene field effect transistors with ion gel gate dielectrics.
作者： Beom Joon Kim , Houk Jang , Seoung-Ki Lee , Byung Hee Hong , Jong-Hyun Ahn
DOI: 10.1021/NL101559N
关键词: Polymer substrate 、 Electron mobility 、 Graphene 、 Stretchable electronics 、 Low voltage 、 Optoelectronics 、 Nanotechnology 、 Materials science 、 Dielectric 、 Transistor 、 Graphene nanoribbons
摘要: … at both the ion gel/graphene and ion gel/gate electrode interfaces … After the solvent was removed, an ion gel film was formed … top gate electrodes (Au, 100 nm) were evaporated thermally …
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