Effect of the impurity on the Aharonov-Bohm oscillations and the intraband absorption in GaAs∕Ga1−xAlxAs quantum ring under intense THz laser field
作者： M.G. Barseghyan , V.N. Mughnetsyan , L.M. Pérez , A.A. Kirakosyan , D. Laroze
DOI: 10.1016/J.PHYSE.2019.03.003
关键词: Laser 、 Magnetic field 、 Dipole 、 Physics 、 Atomic physics 、 Quantum 、 Ground state 、 Field (physics) 、 Excited state 、 Impurity
摘要: Abstract The simultaneous effect of intense THz laser field and hydrogenic donor impurity on Aharonov-Bohm in a GaAs∕Ga1−xAlxAs single quantum ring is investigated using the non-perturbative Floquet theory high-frequency limit Ehlotzky approximation. It shown that destroy usual oscillations electron ground state. Aharonov-Bohm-like excited energy levels, as well dipole, allowed optical transition energies can be effectively controlled by changing parameter position. Furthermore, an unusual oscillatory behavior also observed for dependence intensity magnetic induction. obtained results indicate possibility prediction effective control electronic properties future devices rings.
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