作者: Malek Atyaoui , Wissem Dimassi , Ghrib Monther , Radhouane Chtourou , Hatem Ezzaouia
DOI: 10.1016/J.JLUMIN.2011.08.043
关键词: Photoluminescence 、 Layer (electronics) 、 Cerium 、 Fourier transform infrared spectroscopy 、 Infrared spectroscopy 、 Spectroscopy 、 Materials science 、 Analytical chemistry 、 Doping 、 Porous silicon
摘要: Abstract In this work, we present results for Cerium (Ce) doping effects on photoluminescence (PL) properties of porous silicon (PS). was deposited using electrochemical deposition prepared by anodization P-type (100) Si. From the spectroscopy, it shown that treated with cerium can lead to an increase when they are irradiated light compared layer without cerium. order understand contribution enhanced photoluminescence, energy dispersive X-ray (EDX) Fourier transmission infrared spectroscopy (FTIR), diffraction (XRD) and atomic force microscopy (AFM) were performed, improved may be attributed change Si–H bonds into Si–O–Ce a newly formed PS during Ce coating.