Relationship between self‐organization and size of InAs islands on InP(001) grown by gas‐source molecular beam epitaxy

作者： A. Ponchet , A. Le Corre , H. L’Haridon , B. Lambert , S. Salaün

关键词: Substrate (electronics) 、 Transmission electron microscopy 、 Monolayer 、 Condensed matter physics 、 Range (particle radiation) 、 Heterojunction 、 Nanostructure 、 Molecular beam epitaxy 、 Quantum dot 、 Molecular physics 、 Materials science

摘要: … monolayers, the islands are about 7 nm high and randomly distributed. Above 2 monolayers… with different InAs amounts ranging from 1.5 to 4 monolayers ML. The 2D–3D transition was …