作者: P. Wahlgren , P. Delsing , D. B. Haviland
DOI: 10.1103/PHYSREVB.52.R2293
关键词: Quantum tunnelling 、 Biasing 、 Coulomb blockade 、 Condensed matter physics 、 Order (ring theory) 、 Physics 、 Omega 、 Input offset voltage 、 State (functional analysis) 、 Capacitance
摘要: We have investigated several single and double aluminum tunnel junctions in the nonsuperconducting state. Current-voltage (I-V) characteristics were measured up to voltages corresponding hundred times e/C, where C is capacitance of each junction. The individual had capacitances order 0.5 fF resistances 50--150 k\ensuremath{\Omega}. offset voltage, defined as ${\mathit{V}}_{\mathrm{off}}$=V-I/(dI/dV), resistance independent for given junction capacitances, but depends on bias voltage. For a voltage very small low voltages, it approaches local-rule value e/2C at high voltages. global rule applies equals ${\mathit{V}}_{\mathrm{off}}$=e/${\mathit{C}}_{\mathrm{\ensuremath{\Sigma}}}$, ${\mathit{C}}_{\mathrm{\ensuremath{\Sigma}}}$=2C+${\mathit{C}}_{0}$. At large local contributes with so that ${\mathit{V}}_{\mathrm{off}}$=e/C. This paper shows careful analysis has be made determine values involved.