作者: Yi-An Chang , Hao-Chung Kuo , Tien-Chang Lu , Fang-I Lai , Shou-Yi Kuo
关键词: Voltage 、 Energy conversion efficiency 、 Optoelectronics 、 Solar cell 、 Materials science 、 Window (computing) 、 Photoluminescence 、 Common emitter 、 Crystal 、 Carrier lifetime 、 General Engineering 、 General Physics and Astronomy
摘要: In this study a novel p-emitter/window capping configuration design applied to p+–n In0.5Ga0.5P solar cell is developed. By grading the Ga and Al compositions in interface between p-In0.5Ga0.5P emitter p-In0.5Al0.5P window layers, output characteristics of are improved. It found that photoluminescence (PL) intensity increased minority carrier lifetime obtained from room-temperature time-resolved (TR) PL measurement can be 5.3 ns typical 7.0 ns, indicating application compositional improve crystal quality becomes smoother, thus reducing nonradiative recombination losses. Both short-circuit current open-circuit voltage correspondingly conversion efficiency improved 14.57% 15.32% new under one-sun air-mass 1.5 global illumination.