Mean barrier height of Pd Schottky contacts on ZnO thin films
作者： Holger von Wenckstern , Gisela Biehne , R. Abdel Rahman , Holger Hochmuth , Michael Lorenz
DOI: 10.1063/1.2180445
关键词: Schottky barrier 、 Schottky diode 、 Thin film 、 Pulsed laser deposition 、 Wide-bandgap semiconductor 、 Deposition (law) 、 Materials science 、 Standard deviation 、 Analytical chemistry 、 Semiconductor thin films
摘要: We have investigated the temperature dependence of barrier height high-quality Pd Schottky contacts on (0001)-oriented ZnO thin films by temperature-dependent current-voltage and capacitance-voltage (CV) measurements. The been grown pulsed-laser deposition. effective ΦB,eff deduced from measurements was evaluated considering a Gaussian distribution with standard deviation σ around mean ΦB,m. determined ΦB,m=(1.16±0.04)eV which agrees well value 1.14eV CV is to be (134±10)meV.
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